Datasheet

V850ES/JG3 CHAPTER 29 ELECTRICAL SPECIFICATIONS
R01UH0015EJ0300 Rev.3.00 Page 798 of 870
Sep 30, 2010
Flash Memory Programming Characteristics
(TA = −40 to +85°C, VDD = EVDD = AVREF0 = AVREF1, VSS = EVSS = AVSS = 0 V, CL = 50 pF)
(1) Basic characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Operating frequency fCPU 2.5 32 MHz
Supply voltage VDD 2.85 3.6 V
Used for updating programs
When using flash memory
programmer and Renesas
Electronics self programming
library
Retained
for
15 years
1,000 times
Number of rewrites CWRT
Used for updating data When
using Rnesas Electronics
EEPROM emulation library
(usable ROM size: 12 KB of 3
consecutive blocks)
Retained
for
5 years
10,000 times
Programming temperature tPRG −40 +85 °C
(2) Serial write operation characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
FLMD0, FLMD1 setup time tMDSET 2 3000 ms
FLMD0 count start time from RESET↑ tRFCF fX = 2.5 to 10 MHz 800 μ s
FLMD0 counter high-level width/
low-level width
t
CH/tCL 10 100 μ s
FLMD0 counter rise time/fall time tR/tF 1 μ s
Remark α = oscillation stabilization time
Flash write mode setup timing
V DD
FLMD1
0 V
V
DD
RESET (input)
0 V
V
DD
FLMD0
0 V
t RFCF
t CL
t F t R
t CH
t MDSET
<R>