Datasheet

V850ES/JG3 CHAPTER 29 ELECTRICAL SPECIFICATIONS
R01UH0015EJ0300 Rev.3.00 Page 774 of 870
Sep 30, 2010
DC Characteristics
(TA = −40 to +85°C, VDD = EVDD = AVREF0 = AVREF1, VSS = EVSS = AVSS = 0 V) (3/3)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
fXX = 32 MHz (fX = 4 MHz) 40 64 mA IDD1 Normal operation
f
XX = 20 MHz (fX = 5 MHz) 30 50 mA
fXX = 32 MHz (fX = 4 MHz) 27 45 mA IDD2 HALT mode
f
XX = 20 MHz (fX = 5 MHz) 19 30 mA
IDD3 IDLE1 mode
f
XX = 5 MHz (fX = 5 MHz),
PLL off
0.9 2.4 mA
IDD4 IDLE2 mode
f
XX = 5 MHz (fX = 5 MHz),
PLL off
0.3 0.8 mA
IDD5
Subclock
operating mode
f
XT = 32.768 kHz,
main clock,
internal oscillator stopped
80 600
μ A
IDD6 Sub-IDLE mode
f
XT = 32.768 kHz,
main clock,
internal oscillator stopped
11 100
μ A
Subclock stopped, internal
oscillator stopped
8 80
μ A
Subclock operating, internal
oscillator stopped
11 90
μ A
IDD7 STOP mode
Subclock stopped, internal
oscillator operating
13 90
μ A
fXX = 32 MHz (fX = 4 MHz) 45 74 mA
Supply current
Note
I
DD8
Flash memory
programming
mode
f
XX = 20 MHz (fX = 5 MHz) 34 60 mA
Note To t al of V DD and EVDD currents. Current flowing through the output buffers, A/D converter, D/A converter, and
on-chip pull-down resistor is not included.