Datasheet

V850ES/JG3 CHAPTER 27 FLASH MEMORY
R01UH0015EJ0300 Rev.3.00 Page 724 of 870
Sep 30, 2010
27.3 Functional Outline
The internal flash memory of the V850ES/JG3 can be rewritten by using the rewrite function of the dedicated flash
programmer, regardless of whether the V850ES/JG3 has already been mounted on the target system or not (off-board/on-
board programming).
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
supported, so that the program cannot be changed by an unauthorized person.
The rewrite function using the user program (self programming) is ideal for an application where it is assumed that the
program is changed after production/shipment of the target system. A boot swap function that rewrites the entire flash
memory area safely is also supported. In addition, interrupt servicing is supported during self programming, so that the
flash memory can be rewritten under various conditions, such as while communicating with an external device.
Table 27-1. Rewrite Method
Rewrite Method Functional Outline Operation Mode
On-board programming Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash programmer.
Off-board programming Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash programmer and a dedicated
program adapter board (FA series).
Flash memory
programming mode
Self programming Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of off-board/on-
board programming. (During self-programming, instructions cannot be
fetched from or data access cannot be made to the internal flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory in advance.)
Normal operation mode
Remark The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.