Datasheet

V850ES/JG3 CHAPTER 27 FLASH MEMORY
R01UH0015EJ0300 Rev.3.00 Page 722 of 870
Sep 30, 2010
27.2 Memory Configuration
The V850ES/JG3 internal flash memory area is divided into 4 KB blocks and can be programmed/erased in block units.
All or some of the blocks can also be erased at once.
When the boot swap function is used, the physical memory allocated at the addresses of blocks 0 to 15 is replaced by
the physical memory allocated at the addresses of blocks 16 to 31. For details of the boot swap function, see 27.5
Rewriting by Self Programming.