Datasheet
RJP60V0DPM Preliminary
R07DS0669EJ0200 Rev.2.00 Page 2 of 7
Apr 02, 2014
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
— — 1 μA V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
— — ±1 μA V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
5.5 — 7.5 V V
CE
= 10 V, I
C
= 1 mA
Collector to emitter saturation voltage V
CE(sat)
— 1.5 2.1 V I
C
= 22 A, V
GE
= 15 V
Note3
V
CE(sat)
— 1.9 — V I
C
= 45 A, V
GE
= 15 V
Note3
Input capacitance Cies — 1080 — pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Output capacitance Coes — 58 — pF
Reveres transfer capacitance Cres — 42 — pF
Total gate charge Qg — 75 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 22 A
Gate to emitter charge Qge — 10 — nC
Gate to collector charge Qgc — 45 — nC
Switching time t
d(on)
— 45 — ns
V
CE
= 300 V , V
GE
= 15 V
I
C
= 22 A
Rg = 5 Ω
Inductive load
t
r
— 40 — ns
t
d(off)
— 100 — ns
t
f
— 70 — ns
Short circuit withstand time t
sc
— 6 — μs
V
CC
≤ 360 V , V
GE
= 15 V
Tc = 100 °C
Notes: 3. Pulse test.