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R07DS0669EJ0200 Rev.2.00 Page 1 of 7

Apr 02, 2014

Preliminary Datasheet

RJP60V0DPM

600V - 22A - IGBT

Application: Inverter

Features

• High breakdown-voltage

• Low Collector to Emitter saturation Voltage

CE(sat)

= 1.5 V typ. (at I

= 22 A, V

= 15 V, Ta = 25°C)

• Short circuit withstand time (6 μs typ.)

• Trench gate and thin wafer technology (G6H series)

Outline

RENESAS Package code: PRSS0003ZA-A

(Package name: TO-3PFM)

1. Gate

2. Collecto

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

600 V

Gate to emitter voltage V

GES

±30 V

Collector current Tc = 25°C I

45 A

Tc = 100°C I

22 A

Collector peak current I

C(peak)

Note1

90 A

Collector dissipation P

Note2

40 W

Junction to case thermal impedance θj-c

Note2

3.125 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

R07DS0669EJ0200

Rev.2.00

pr 02, 2014

Summary of content (8 pages)

PAGE 1
Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3.
PAGE 2
RJP60V0DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Short circuit withstand time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min — — 5.
PAGE 3
RJP60V0DPM Preliminary Main Characteristics Maximum Safe Operation Area Turn-off Safe Operation Area 50 100 PW 10 10 0μ Collector Current IC (A) Collector Current IC (A) 1000 =1 0μ s s 1 0.1 40 30 20 10 Tc = 25°C Single pulse 0.
PAGE 4
RJP60V0DPM Preliminary Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Typical Transfer Characteristics Collector Current IC (A) 100 Tc = –25°C 25°C 80 75°C 125°C 60 40 20 VCE = 10 V Pulse Test 0 4 6 8 10 12 16 14 4 VGE = 15 V Pulse Test 3 IC = 45 A 2 22 A 3A 1 0 −25 25 50 75 100 125 150 Junction Temparature Tj (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs.
PAGE 5
RJP60V0DPM Preliminary Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (1) 1000 Swithing Energy Losses E (μJ) 10000 Switching Time t (ns) VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25 °C tf 100 td(off) td(on) 10 tr 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25 °C Eon 1000 Eoff 100 10 1 10 100 1 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 1000 10000 VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25 °C Swithing Energy Losses E (μJ) Switch
PAGE 6
Preliminary Normalized Transient Thermal Impedance γs (t) RJP60V0DPM Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.1 θj – c(t) = γs (t) • θj – c θj – c = 3.125 °C/W, Tc = 25°C 0.2 0.1 0.05 PDM 0.02 0.01 1 shot pulse 0.01 100 μ 1m 10 m D= PW T PW T 100 m Pulse Width 1 10 100 1000 PW (s) Waveform Switching Time Test Circuit VGE 90% Diode clamp/ D.U.T 10% L IC 90% Rg D.U.T/ Driver 90% VCC 10% td(off) R07DS0669EJ0200 Rev.2.
PAGE 7
RJP60V0DPM Preliminary Package Dimension Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 4.0 ± 0.3 2.6 0.86 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 1.6 0.86 0.66 5.45 ± 0.5 MASS[Typ.] 5.2g + 0.2 – 0.1 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Orderable Part No. RJP60V0DPM-00#T1 R07DS0669EJ0200 Rev.2.
PAGE 8
Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2.