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R07DS0586EJ0100 Rev.1.00 Page 1 of 6

Nov 25, 2011

Preliminary Datasheet

RJP60F4DPM

600 V - 30 A - IGBT

High Speed Power Switching

Features

 Low collector to emitter saturation voltage

CE(sat)

= 1.4 V typ. (at I

= 30 A, V

= 15V, Ta = 25°C)

 Trench gate and thin wafer technology

 High speed switching

Outline

RENESAS Package code: PRSS0003ZA-A

(Package name: TO-3PFM)

1. Gate

2. Collecto

3. Emitter

Absolute Maximum Ratings

(Tc = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage V

CES

600 V

Gate to emitter voltage V

GES

30 V

Tc = 25 °C I

Note1

60 A Collector current

Tc = 100 °C I

Note1

30 A

Collector peak current ic(peak)

Note1

120 A

Collector dissipation P

41.2 W

Junction to case thermal impedance j-c 3.03 °C/W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. Pulse width limited by safe operating area.

R07DS0586EJ0100

Rev.1.00

Nov 25, 2011

Summary of content (7 pages)

PAGE 1
Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3.
PAGE 2
RJP60F4DPM Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min   4          Typ    1.4 1.7 1900 70 33 45 150 70 80 Max 100 ±1 8 1.
PAGE 3
RJP60F4DPM Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics Collector Current IC (A) 120 100 10 10 μs PW = 0 10 1 μs 0.1 Tc = 25°C 1 shot pulse 0.01 10 10 V 9.5 V 15 V 60 9V 40 8.5 V 20 1 0 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs.
PAGE 4
RJP60F4DPM Preliminary Typical Capacitance vs.
PAGE 5
RJP60F4DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 θj − c(t) = γs (t) • θj − c θj − c = 3.03 °C/W, Tc = 25 °C 0.2 0.1 0.1 0.05 PDM 0.02 0.01 0.01 10 μ 1m PW T PW T 1 shot pulse 100 μ D= 10 m Pulse Width 100 m 1 10 10 PW (s) Switching Time Test Circuit Waveform 90% Diode clamp VGE L 90% IC D.U.
PAGE 6
RJP60F4DPM Preliminary Package Dimensions RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 MASS[Typ.] 5.2g 5.0 ± 0.3 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 21.0 ± 0.5 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number RJP60F4DPM-00#T1 R07DS0586EJ0100 Rev.1.
PAGE 7
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