Datasheet

RJP60F0DPM Preliminary
R07DS0585EJ0100 Rev.1.00 Page 4 of 6
Nov 25, 2011
Capacitance C (pF)
1
10
100
1000
10000
010050150 200 250
300
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
2412 36 48
60
I
C
= 25 A
Ta = 25
°C
V
GE
V
CE
V
CC
= 600 V
300 V
V
CC
= 600 V
300 V
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Ta = 25°C
1
10
100
1000
Switching Characteristics (Typical) (1)
Switching Time t (ns)
110100
Colloctor Current I
C
(A)
t
d(off)
t
d(on)
t
f
t
r
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Ta = 25
°C, Resistive load
Switching Characteristics (Typical) (2)
Switching Time t (ns)
110100
t
d(off)
t
d(on)
t
f
t
r
10
100
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 30 A, Ta = 25°C, Resitive load
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (3)
Switching Time t (ns)
2550 75 100 125 150
t
d(off)
t
d(on)
10
100
1000
Case Temperature Tc ( ° C)
t
f
t
r
V
CC
= 300 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω, Resitive load