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R07DS0585EJ0100 Rev.1.00 Page 1 of 6

Nov 25, 2011

Preliminary Datasheet

RJP60F0DPM

600 V - 25 A - IGBT

High Speed Power Switching

Features

 Low collector to emitter saturation voltage

CE(sat)

= 1.4 V typ. (at I

= 25 A, V

= 15 V, Ta = 25°C)

 Trench gate and thin wafer technology

 High speed switching

Outline

RENESAS Package code: PRSS0003ZA-A

(Package name: TO-3PFM)

1. Gate

2. Collecto

3. Emitter

Absolute Maximum Ratings

(Tc = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage V

CES

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25 °C I

Note1

50 A Collector current

Tc = 100°C I

Note1

25 A

Collector peak current ic(peak)

Note1

100 A

Collector dissipation P

40 W

Junction to case thermal impedance j-c 3.125 °C/W

Channel temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. Pulse width limited by safe operating area.

2. PW  5 s, duty cycle  1%

R07DS0585EJ0100

Rev.1.00

Nov 25, 2011

Summary of content (7 pages)

PAGE 1
Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3.
PAGE 2
RJP60F0DPM Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min — — 4 — —        Typ — — — 1.4 1.7 1550 82 26 46 92 70 90 Max 100 ±1 8 1.
PAGE 3
RJP60F0DPM Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 100 PW Collector Current IC (A) 100 =1 0μ 10 s 10 0μ s 1 0.1 0.01 0.001 0.1 80 9.8 V 13 V 9.6 V 15 V 60 9.4 V 9.2 V 40 9V 20 8.8 V 8.6 V VGE = 8.4 V 1 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs.
PAGE 4
RJP60F0DPM Preliminary Typical Capacitance vs.
PAGE 5
RJP60F0DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 3.125°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 PDM 0.02 0.01 10 μ D= PW T PW T 0.01 1 shot pulse 100 μ 1m 10 m Pulse Width 100 m 1 10 100 PW (s) Switching Time Test Circuit Waveform 90% Diode clamp VGE 10% L 90% IC D.U.
PAGE 6
RJP60F0DPM Preliminary Package Dimensions RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 MASS[Typ.] 5.2g 5.0 ± 0.3 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 5.45 ± 0.5 + 0.2 – 0.1 21.0 ± 0.5 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Orderable Part No. RJP60F0DPM-00#T1 R07DS0585EJ0100 Rev.1.
PAGE 7
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