Datasheet

RJP60D0DPP-M0 Preliminary
R07DS0173EJ0100 Rev.1.00 Page 2 of 6
Mar 11, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
5 A V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
4.0 6.0 V V
CE
= 10 V, I
C
= 1 mA
V
CE(sat)
1.6 2.2 V I
C
= 22 A, V
GE
= 15 V
Note3
Collector to emitter saturation voltage
V
CE(sat)
2.0 — V I
C
= 45 A, V
GE
= 15 V
Note3
Input capacitance Cies 1050 pF
Output capacitance Coes 70 pF
Reveres transfer capacitance Cres 32 pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Total gate charge Qg 45 nC
Gate to emitter charge Qge 6 nC
Gate to collector charge Qgc 20 nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 22 A
t
d(on)
35 ns
t
r
20 ns
t
d(off)
90 ns
Switching time
t
f
70 ns
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A
Rg = 5 
Inductive load)
Short circuit withstand time t
sc
3.0 5.0 s V
CC
400 V, V
GE
= 15 V
Notes: 3. Pulse test