Datasheet

RJP6085DPK
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 4 of 5
10050 150 10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
1000
Capacitance C (pF)
1
10
100
1000
10000
0 50 100 150 200 250
Cies1
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
81624 32 40
I
C
= 40 A
V
GE
V
CE
V
GE
= 300 V
100 V
V
CE
= 300 V
100 V
Switching Characteristics (Typical) (1)
1 10 100
1 10 100
Switching Characteristics (Typical) (2)
10
100
1000
Switching Characteristics (Typical) (3)
10
100
1000
0.01
0.1
1
10
0
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Ta = 25
°C
I
C
= 40 A, R
L
= 7.5 Ω
V
GE
= 15 V, Ta = 25°C
I
C
= 40 A, R
L
= 7.5 Ω
V
GE
= 15 V, Ta = 25°C
t
d(off)
t
d(on)
t
f
t
r
t
d(off)
t
d(on)
t
f
t
r
t
d(off)
t
d(on)
t
f
t
r
V
GE
= 0 V
f = 1 MHz
Ta = 25°C
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A) Gate Resistance Rg (Ω)
Switching Time t (ns)Switching Time t (ns)
Thermal impedance θj-c (°C/W)
Switching Time t (ns)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Case Temperature Tc (°C)
Pulse Width PW (s)
Tc = 25°C
Single pulse
Transient Thermal Impedance vs. Pulse Width