Datasheet

RJP6085DPK
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
— — 10 μA V
CE
= 600V, V
GE
= 0 V
Gate to emitter leak current I
GES
— — ±1 μA V
GE
= ±30 V, V
CE
= 0 V
Gate to emitter cutoff voltage V
GE(off)
4 — 6 V V
CE
= 10V, I
C
= 1 mA
Collector to emitter saturation voltage V
CE(sat)
— 2.65 3.5 V I
C
= 40 A, V
GE
= 15V
Note3
Input capacitance Cies — 1150 — pF
Output capacitance Coes — 105 — pF
Reveres transfer capacitance Cres — 12 — pF
V
CE
= 25V
V
GE
= 0 V
f = 1MHz
t
d(on)
— 30 — ns
t
r
— 60 — ns
t
d(off)
— 60 — ns
Switching time
t
f
— 40 — ns
I
C
= 40 A, Resistive Load
V
CC
= 300V
V
GE
= 15V
Rg = 5 Ω
Notes: 3. Pulse test