Datasheet

REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 1 of 5
RJP6085DPK
Silicon N Channel IGBT
High Speed Power Switching
REJ03G1862-0100
Rev.1.00
Nov 09, 2009
Features
• High speed switching
• Low collector to emitter saturation voltage
Outline
RENESAS Package code : PRSS000 4ZE-A
(Package name: TO-3P)
1
2
3
4
1. Gate
2. Collecotor
3. Emitter
4. Collector (Flange)
C
G
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to Emitter voltage V
CES
600 V
Gate to Emitter voltage V
GES
±30 V
Collector current I
C
40 A
Collector peak current I
C(peak)
Note1
80 A
Collector dissipation P
C
Note2
178.5 W
Junction to case thermal impedance θj-c
Note2
0.7 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C