Datasheet
R07DS0923EJ0400 Rev.4.00 Page 1 of 6
Mar 21, 2013
Preliminary Datasheet
RJK0391DPA
30V, 50A, 2.9m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
G
D
SSS
DDD
4
123
5678
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
876
5
2
1
34
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
50 A
Drain peak current I
D(pulse)
Note1
200 A
Body-drain diode reverse drain current I
DR
50 A
Avalanche current I
AP
Note 2
25 A
Avalanche energy E
AR
Note 2
62.5 mJ
Channel dissipation Pch
Note3
50 W
Channel to case thermal impedance ch-c
Note3
2.5 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
R07DS0923EJ0400
Rev.4.00
Mar 21, 2013