Datasheet

RJH60V1BDPP-M0 Preliminary
R07DS0759EJ0100 Rev.1.00 Page 6 of 9
May 25, 2011
Capacitance C (pF)
1
10
100
10000
1000
010050150 200 250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
4812 16
20
V
GE
V
CE
V
GE
= 0 V
f = 1 MHz
Ta = 25
° C
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
V
CC
= 300 V
I
C
= 8 A
Tc = 25
° C
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
8
4
16
12
0
0 40 80200120
160
V
CC
= 300 V
I
F
= 8 A
Tc = 150 ° C
25 ° C
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
0
40
30
20
10
012 4
3
Tc = 150 ° C
25 ° C
V
GE
= 0 V
Pulse Test
100
50
300
250
200
150
0
0 40 80200120
160
Tc = 150 ° C
25 ° C
V
CC
= 300 V
I
F
= 8 A
0.20
0.12
0.16
0.08
0.04
0 40 80200120 160
0
Tc = 150 ° C
25 ° C
V
CC
= 300 V
I
F
= 8 A