Datasheet

RJH60V1BDPP-M0 Preliminary
R07DS0759EJ0100 Rev.1.00 Page 4 of 9
May 25, 2011
20
10
30
40
Gate to Emitter Voltage V
GE
(V)
1
3
2
4
5
1
3
2
4
5
8 12 201610 1814812 201610 18
14
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Tc = 25 ° C
Pulse Test
Tc = 150 ° C
Pulse Test
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
−25 0257512550 100 150
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Case Temparature Tc (°C)
4812 2016
0
1.0
2.0
1.5
3.5
2.5
3.0
4.0
8 A
I
C
= 16 A
Typical Transfer Characteristics
Collector Current I
C
(A)
Gate to Emitter Voltage V
GE
(V)
V
GE
= 15 V
Pulse Test
0
V
CE
= 10 V
Pulse Test
150°C
Tc = 25°C
I
C
= 16 A
I
C
= 16 A
8 A
8 A
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
0
2
4
6
8
10
−25 0257512550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
I
C
= 10 mA
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
Frequency f (kHz)
6
4
2
5
3
1
0
110010 1000
Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)