Datasheet

RJH60V1BDPP-M0 Preliminary
R07DS0759EJ0100 Rev.1.00 Page 2 of 9
May 25, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
V
(BR)CES
600 V I
C
=10 A, V
GE
= 0
Zero gate voltage collector current
/ Diode reverse current
I
CES
/ I
R
5 A V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
5.5 7.5 V V
CE
= 10 V, I
C
= 1 mA
V
CE(sat)
1.6 2.2 V I
C
= 8 A, V
GE
= 15 V
Note3
Collector to emitter saturation voltage
V
CE(sat)
2.2 — V I
C
=16 A, V
GE
= 15 V
Note3
Input capacitance Cies 300 pF
Output capacitance Coes 27 pF
Reverse transfer capacitance Cres 12 pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Total gate charge Qg 19 nC
Gate to emitter charge Qge 3.5 nC
Gate to collector charge Qgc 11 nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 8 A
Turn-on delay time t
d(on)
30 ns
Rise time t
r
12 ns
Turn-off delay time t
d(off)
55 ns
Fall time t
f
110 ns
Turn-on energy E
on
0.017 mJ
Turn-off energy E
off
0.11 mJ
Total switching energy E
total
0.13 mJ
V
CC
= 300 V
V
GE
= 15 V
I
C
= 8 A
Rg = 5 
(Inductive load)
Short circuit withstand time t
sc
3 6 s
Tc = 100 C
V
GE
360 V, V
GE
= 15 V
FRD Forward voltage V
F
2.5 V I
F
= 8 A
Note3
FRD reverse recovery time t
rr
25 ns
FRD reverse recovery charge Q
rr
0.01 C
FRD peak reverse recovery current I
rr
1.0 A
I
F
= 8 A
di
F
/dt = 100 A/s
Notes: 3. Pulse test.