Datasheet

RJH60M3DPP-M0 Preliminary
R07DS0532EJ0300 Rev.3.00 Page 6 of 9
May 25, 2012
010 3020 7040 6050
20
10
50
40
30
0
Gate Charge Qg (nc)
Diode Current Slope di/dt (A/μs)
Dynamic Input Characteristics (Typical)
800
600
400
200
0
16
12
8
4
0
V
CC
= 300 V
I
C
= 17 A
Tc = 25
° C
V
GE
V
CE
Collector to Emitter Voltage V
CE
(V)
Reverse Recovery Time t
rr
(ns)
Gate to Emitter Voltage V
GE
(V)
Capacitance C (pF)
Typical Capacitance vs.
Collector to Emitter Voltage
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Collector to Emitter Voltage V
CE
(V)
80
40
200
160
120
0
0 40 80200120 160040 80200120
160
V
CC
= 300 V
I
F
= 17 A
Tc = 150 ° C
25 ° C
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.2
0.1
0.5
0.4
0.3
0
V
CC
= 300 V
I
F
= 17 A
Tc = 150 ° C
25 ° C
8
4
16
12
0
0 40 80200120
160
V
CC
= 300 V
I
F
= 17 A
Tc = 150 ° C
25 ° C
25 ° C
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
00.4 0.8 1.21.6 2.0 2.4
V
GE
= 0 V
Pulse Test
Tc = 150 ° C
1
10
100
1000
1000
010050150 200 250
300
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Tc = 25
° C