Datasheet

RJH60M3DPP-M0 Preliminary
R07DS0532EJ0300 Rev.3.00 Page 5 of 9
May 25, 2012
10 100
100
1000
1
10
1
t
d(on)
t
r
t
f
t
d(off)
0.1
1
10
110
100
110
100
Gate Registance Rg (Ω)
(Inductive load)
Eoff
Eon
Swithing Energy Losses E (mJ)
Switching Characteristics (Typical) (4)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A, Tc = 150 ° C
0.1
1
10
Eoff
Eon
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
° C
Swithing Energy Losses E (mJ)
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (2)Switching Characteristics (Typical) (1)
Collector Current I
C
(A)
(Inductive load)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
° C
1 10 100
Switching Characteristics (Typical) (3)
t
d(on)
Gate Resistance Rg (Ω)
(Inductive load)
Switching Time t (ns)
10
100
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A, Tc = 150 ° C
t
f
t
d(off)
t
r
10
100
1000
5025 15075 125
100
Switching Characteristics (Typical) (5)
t
d(on)
Channel Temperature Tc (°C)
(Inductive load)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A, Rg = 5 Ω
t
f
t
d(off)
t
r
0.1
1
10
5025 15075 125
100
Channel Temperature Tc (°C)
(Inductive load)
Switching Characteristics (Typical) (6)
Eoff
Eon
Swithing Energy Losses E (mJ)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A, Rg = 5 Ω