Datasheet

RJH60M3DPP-M0 Preliminary
R07DS0532EJ0300 Rev.3.00 Page 2 of 9
May 25, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown voltage V
(BR)CES
600 — — V Iy = 10 A, V
GE
= 0
Zero gate voltage collector current
/ Diode reverse current
I
CES
/ I
R
— — 5 A V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
— — ±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
5 — 7 V V
CE
= 10 V, I
C
= 1 mA
V
CE(sat)
— 1.8 2.3 V I
C
= 17 A, V
GE
= 15 V
Note3
Collector to emitter saturation voltage
V
CE(sat)
— 2.2 — V I
C
= 35 A, V
GE
= 15 V
Note3
Input capacitance Cies — 900 — pF
Output capacitance Coes — 60 — pF
Reverse transfer capacitance Cres — 30 — pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Total gate charge Qg — 60 — nC
Gate to emitter charge Qge — 9 — nC
Gate to collector charge Qgc — 35 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 17 A
Turn-on delay time t
d(on)
— 38 — ns
Rise time t
r
— 20 — ns
Turn-off delay time t
d(off)
— 90 — ns
Fall time t
f
— 70 — ns
Turn-on energy E
on
— 0.29 — mJ
Turn-off energy E
off
— 0.29 — mJ
Total switching energy E
total
— 0.58 — mJ
V
CC
= 300 V
V
GE
= 15 V
I
C
= 17 A
Rg = 5 
Inductive load
Short circuit withstand time t
sc
6 8 — s
Tc = 100 C
V
CC
 360 V, V
GE
= 15 V
FRD Forward voltage V
F
— 1.3 1.7 V I
F
= 17 A
Note3
FRD reverse recovery time t
rr
— 90 — ns
FRD reverse recovery charge Q
rr
— 0.15 — C
FRD peak reverse recovery current I
rr
— 4.5 — A
I
F
= 17 A
di
F
/dt = 100 A/s
Notes: 3. Pulse test.