Datasheet

RJH60M1DPE Preliminary
R07DS0529EJ0300 Rev.3.00 Page 6 of 9
May 25, 2012
0 0.4 0.8 1.2 1.6 2.0
0612 3018
24
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
800
600
400
200
0
16
12
8
4
0
V
CC
= 300 V
I
C
= 8 A
Tc = 25
° C
V
GE
V
CE
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Capacitance C (pF)
1
10
100
1000
010050 150 200 250
300
Typical Capacitance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Tc = 25
° C
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
100
50
300
250
200
150
0
04080 200120 160
04080 200120
160
V
CC
= 300 V
I
F
= 8 A
Tc = 150 ° C
25 ° C
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
12
8
4
16
0
V
CC
= 300 V
I
F
= 8 A
Tc = 150 ° C
25 ° C
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
04080 200120 160
0.4
0.2
1.0
0.8
0.6
0
Tc = 150 ° C
25 ° C
V
CC
= 300 V
I
F
= 8 A
0
20
16
12
8
4
Tc = 150 ° C
25 ° C
V
CE
= 0 V
Pulse Test