Datasheet

R07DS0328EJ0200 Rev.2.00 Page 1 of 7
Jul 22, 2011
Preliminary Datasheet
0BRJH60F7DPQ-A0
600 V - 50 A - IGBT
High Speed Power Switching
1BFeatures
 Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
t
f
= 74 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5 , Ta = 25°C, inductive load)
2BOutline
1. Gate
2. Collecto
r
3. Emitter
4. Collecto
r
C
G
E
1
2
3
4
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
3BAbsolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
±30 V
Tc = 25°C I
C
90 A Collector current
Tc = 100°C I
C
50 A
Collector peak current ic(peak)
Note1
180 A
Collector to emitter diode forward peak current i
DF
(peak)
Note2
100 A
Collector dissipation P
C
328.9 W
Junction to case thermal impedance (IGBT) j-c 0.38 °C/W
Junction to case thermal impedance (Diode) j-cd 2.0 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%
4B
R07DS0328EJ0200
Rev.2.00
Jul 22, 2011