Datasheet
R07DS0055EJ0300 Rev.3.00 Page 1 of 7
Nov 24, 2010
Preliminary Datasheet
RJH60F5DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.37 V typ. (I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
r
= 85 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
C
G
E
RENESAS Package code:
PRSS0004ZE-A
(Package name:
TO-3P)
1
2
3
4
Absolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
±30 V
Tc = 25 °C I
C
80 A Collector current
Tc = 100 °C I
C
40 A
Collector peak current ic(peak)
Note1
160 A
Collector to emitter diode forward peak current i
DF
(peak)
Note2
100 A
Collector dissipation P
C
260.4 W
Junction to case thermal impedance (IGBT) j-c 0.48 °C/W
Junction to case thermal impedance (Diode) j-c 2.0 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
R07DS0055EJ0300
Rev.3.00
Nov 24, 2010