Datasheet

RJH60F5BDPQ-A0 Preliminary
R07DS0631EJ0100 Rev.1.00 Page 4 of 8
Feb 17, 2012
Capacitance C (pF)
10
100
1000
10000
0 10050150 200 250
300
Cies
Coes
Cres
Typical Capacitance vs.
Collector to Emitter Voltage
V
GE
= 0 V
f = 1 MHz
Ta = 25°C
Collector to Emitter Voltage V
CE
(V)
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
0
20
40
60
80
100
01234
5
V
GE
= 0 V
Ta = 25°C
Pulse Test
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80
100
I
C
= 40 A
Ta = 25
°C
V
GE
V
CE
V
CC
= 600 V
300 V
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
V
CC
= 300 V
600 V