Datasheet

RJH60F4DPQ-A0 Preliminary
R07DS0325EJ0200 Rev.2.00 Page 2 of 7
Jul 22, 2011
Electrical Characteristics
(Tj = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current I
CES
  100 A V
CE
= 600V, V
GE
= 0
Gate to emitter leak current I
GES
  ±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
4  8 V V
CE
= 10V, I
C
= 1 mA
V
CE(sat)
 1.4 1.82 V I
C
= 30 A, V
GE
= 15V
Note3
Collector to emitter saturation voltage
V
CE(sat)
 1.7  V I
C
= 60 A, V
GE
= 15V
Note3
Input capacitance Cies  1900  pF
Output capacitance Coes  93  pF
Reverse transfer capacitance Cres  33  pF
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
t
d(on)
 45  ns
t
r
 150  ns
t
d(off)
 85  ns
Switching time
t
f
 80  ns
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5 
Note3
Inductive load
V
ECF1
 1.2 2.1 V I
F
= 20 A
Note3
C-E diode forward voltage
V
ECF2
 1.5  V I
F
= 40 A
Note3
C-E diode reverse recovery time t
rr
 90  ns
I
F
= 20 A
di
F
/dt = 100 A/s
Notes: 3. Pulse test