Datasheet

RJH60F4DPK Preliminary
R07DS0235EJ0300 Rev.3.00 Page 4 of 7
Nov 17, 2010
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80 100
I
C
= 30 A
V
GE
V
CE
V
CE
= 600 V
300 V
V
CE
= 600 V
300 V
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
Diode Forward Current I
F
(A)
0
20
40
60
80
100
012345
V
GE
= 0 V
Pulse Test
Collector to Emitter Diode
Forward Voltage V
ECF
(V)
Capacitance C (pF)
1
10
100
1000
10000
0 50150100 200 250 300
Typical Capacitance vs.
Colloctor to Emitter Voltage
Colloctor to Emitter Voltage V
CE
(V)
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Ta = 25
° C