Datasheet
R07DS0235EJ0300 Rev.3.00 Page 1 of 7
Nov 17, 2010
Preliminary Datasheet
RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.4 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 80 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
C
G
E
RENESAS Package code:
PRSS0004ZE-A
(Package name:
TO-3P)
1
2
3
4
Absolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
30 V
Tc = 25 °C I
C
Note1
60 A Collector current
Tc = 100 °C I
C
Note1
30 A
Collector peak current ic(peak)
Note1
120 A
Collector to emitter diode forward peak current i
DF
(peak)
Note2
100 A
Collector dissipation P
C
235.8 W
Junction to case thermal impedance j-c 0.53 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
R07DS0235EJ0300
(Previous: REJ03G1835-0200)
Rev.3.00
Nov 17, 2010