Datasheet

R07DS0234EJ0300 Rev.3.00 Page 1 of 7
Mar 30, 2011
Preliminary Datasheet
RJH60F0DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
 Low collector to emitter saturation voltage
V
CE(sat)
= 1.4 V typ. (at I
C
= 25 A, V
GE
= 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
t
f
= 90 ns typ. (at I
C
= 30 A, V
CC
= 400 V, V
GE
= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
C
G
E
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
4
Absolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
±30 V
Tc = 25 °C I
C
Note1
50 A Collector current
Tc = 100°C I
C
Note1
25 A
Collector peak current ic(peak)
Note1
100 A
Collector to emitter diode forward peak current i
DF
(peak)
Note2
100 A
Collector dissipation P
C
201.6 W
Junction to case thermal impedance j-c 0.62 °C/W
Channel temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%
R07DS0234EJ0300
Rev.3.00
Mar 30, 2011