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R07DS0795EJ0200 Rev.2.00 Page 1 of 9

Jul 13, 2012

Preliminary Datasheet

RJH60D7BDPQ-E0

600V - 50A - IGBT

Application: Inverter

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

CE(sat)

= 1.6 V typ. (at I

= 50 A, V

= 15 V, Ta = 25°C)

 Built in fast recovery diode (25 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

= 50 ns typ. (at V

= 300 V, V

= 15 V, I

= 50 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

1. Gate

2. Collecto

3. Emitter

4. Collecto

RENESAS Package code:

PRSS0003ZE-A

(Package name:

TO-247)

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

90 A Collector current

Tc = 100°C I

50 A

Collector peak current ic(peak)

Note1

200 A

Collector to emitter diode forward current i

30 A

Collector to emitter diode forward peak current i

(peak)

Note1

120 A

Collector dissipation P

Note2

300 W

Junction to case thermal resistance (IGBT) j-c

Note2

0.42 °C/W

Junction to case thermal resistance (Diode) j-cd

Note2

1.1 °C/W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0795EJ0200

Rev.2.00

Jul 13, 2012

Summary of content (10 pages)

PAGE 1
Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
PAGE 2
RJH60D7BDPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage VBR(CES) Min 600 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.0 — — — — — — — — — — — — — 1.6 1.8 3150 180 95 125 25 50 60 50 180 ±1 6.0 2.
PAGE 3
RJH60D7BDPQ-E0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 120 Collector Current IC (A) Collector Dissipation Pc (W) 400 300 200 100 0 25 50 75 60 40 20 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 300 PW 100 10 0 = 10 μs Collector Current IC (A) 1000 μs 10 1 0.
PAGE 4
RJH60D7BDPQ-E0 Preliminary Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Tc = 25°C Pulse Test 4 IC = 50 A 90 A 3 2 1 4 8 12 16 20 Collector Current IC (A) 5 Tc = 150°C Pulse Test 4 IC = 50 A 90 A 3 2 1 4 20 16 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) 160 150°C 120 80 40 VCE = 10 V Pulse Test 0 4 8 12 16 20 2.4 VGE = 15 V Pulse Test 2.2 IC = 90 A 2.0 1.8 50 A 1.6 25 A 1.4 1.
PAGE 5
RJH60D7BDPQ-E0 Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 td(off) tf td(on) 100 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 1 100 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon 1 Eoff 0.1 0.
PAGE 6
RJH60D7BDPQ-E0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) Cies 1000 100 Coes VGE = 0 V f = 1 MHz Tc = 25°C 10 0 50 Cres 100 150 200 250 300 800 IC = 50 A Tc = 25°C 600 200 4 VCE 0 0 200 150 Tc = 150°C 25°C 0 40 80 120 160 120 160 0 200 0.5 VCC = 300 V IF = 50 A 0.4 0.3 Tc = 150°C 0.2 25°C 0.1 0 200 0 Diode Current Slope di/dt (A/μs) 40 80 120 160 200 Diode Current Slope di/dt (A/μs) Reverse Recovery Current vs.
PAGE 7
Normalized Transient Thermal Impedance γs (t) RJH60D7BDPQ-E0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.42°C/W, Tc = 25°C 0.05 0.1 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m 1 100 10 Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.
PAGE 8
RJH60D7BDPQ-E0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 0.5 Irr 0.
PAGE 9
RJH60D7BDPQ-E0 Preliminary Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part No. RJH60D7BDPQ-E0#T2 R07DS0795EJ0200 Rev.2.
PAGE 10
Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2.