Datasheet

RJH60D5BDPQ-E0 Preliminary
R07DS0794EJ0300 Rev.3.00 Page 6 of 9
May 23, 2013
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
100
50
300
250
200
150
0
04080 200120 160
04080 200120 160
04080 200120
160
0.2
0.1
0.5
0.4
0.3
V
CC
= 300 V
I
F
= 30 A
Tc = 150 ° C
25 ° C
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0
V
CC
= 300 V
I
F
= 30 A
Tc = 150 ° C
25 ° C
12
8
4
16
0
V
CC
= 300 V
I
F
= 30 A
Tc = 150 ° C
25 ° C
Forward Current I
F
(A)
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
0
120
80
40
100
60
20
0123
4
Tc = 150 ° C
25 ° C
V
CE
= 0 V
Pulse Test
Capacitance C (pF)
10
100
1000
10000
0 10050 150 200 250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80
100
V
GE
V
CE
V
GE
= 0 V
f = 1 MHz
Tc = 25 ° C
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
V
CC
= 300 V
I
C
= 37 A
Tc = 25
° C