Datasheet

RJH60D5BDPQ-E0 Preliminary
R07DS0794EJ0300 Rev.3.00 Page 4 of 9
May 23, 2013
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Collector Current I
C
(A)
Gate to Emitter Voltage V
GE
(V)
Transfer Characteristics (Typical)
0
04812 2016
V
CE
= 10 V
Pulse Test
Tc = 25 ° C
150 ° C
150
125
100
75
50
25
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Case Temparature Tc ( ° C)
−25 0 25 75 12550 100 150
2.8
1.6
1.2
2.0
2.4
37 A
18.5 A
I
C
= 75 A
V
GE
= 15 V
Pulse Test
10
8
6
4
2
0
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25 0 25 75 12550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Case Temparature Tc ( ° C)
1 mA
I
C
= 10 mA
Frequency Characteristics (Typical)
Collector Current I
C(RSM)
(A)
Frequency f (kHz)
5
4
3
2
1
4812 20
16
Tc = 25 ° C
Pulse Test
I
C
= 37 A
75 A
5
4
3
2
1
4812 20
16
I
C
= 37 A
75 A
Tc = 150 ° C
Pulse Test
30
20
10
25
15
5
0
110010 1000
Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)