Datasheet

RJH60D5BDPQ-E0 Preliminary
R07DS0794EJ0300 Rev.3.00 Page 2 of 9
May 23, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
V
BR(CES)
600 — — V I
C
=10 μA, V
GE
= 0
Zero gate voltage collector current
/ Diode reverse current
I
CES
/ I
R
— — 5 μA V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
— — ±1 μA V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
4.0 — 6.0 V V
CE
= 10 V, I
C
= 1 mA
Collector to emitter saturation voltage V
CE(sat)
— 1.6 2.2 V I
C
= 37 A, V
GE
= 15 V
Note3
V
CE(sat)
— 2.0 — V I
C
=75 A, V
GE
= 15 V
Note3
Input capacitance Cies — 1900 — pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Output capacitance Coes — 120 — pF
Reveres transfer capacitance Cres — 60 — pF
Total gate charge Qg — 78 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 37 A
Gate to emitter charge Qge — 12 — nC
Gate to collector charge Qgc — 36 — nC
Turn-on delay time t
d(on)
— 50 — ns
V
CC
= 300 V
V
GE
= 15 V
I
C
= 37 A
Rg = 5 Ω
Inductive load
Rise time t
r
— 40 — ns
Turn-off delay time t
d(off)
— 130 — ns
Fall time t
f
— 50 — ns
Turn-on energy E
on
— 0.40 — mJ
Turn-off energy E
off
— 0.81 — mJ
Total switching energy E
total
— 1.21 — mJ
Short circuit withstand time t
sc
3.0 5.0 — μs V
CC
≤ 360 V, V
GE
= 15 V
FRD Forward voltage V
F
— 2.5 3.0 V I
F
= 30 A
Note3
FRD reverse recovery time t
rr
— 25 — ns
I
F
= 30 A
di
F
/dt = 100 A/μs
FRD reverse recovery charge Q
rr
— 26 — nC
FRD peak reverse recovery current I
rr
— 1.3 — A
Notes: 3. Pulse test.