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R07DS0794EJ0300 Rev.3.00 Page 1 of 9

May 23, 2013

Preliminary Datasheet

RJH60D5BDPQ-E0

600V - 37A - IGBT

Application: Inverter

Features

• Short circuit withstand time (5 μs typ.)

• Low collector to emitter saturation voltage

CE(sat)

= 1.6 V typ. (at I

= 37 A, V

= 15 V, Ta = 25°C)

• Built in fast recovery diode (25 ns typ.) in one package

• Trench gate and thin wafer technology

• High speed switching

= 50 ns typ. (at V

= 300 V, V

= 15 V, I

= 37 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Outline

1. Gate

2. Collecto

3. Emitter

4. Collecto

RENESAS Package code:

PRSS0003ZE-A

(Package name:

TO-247)

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

600 V

Gate to emitter voltage V

GES

±30 V

Collector current Tc = 25°C I

75 A

Tc = 100°C I

37 A

Collector peak current ic(peak)

Note1

150 A

Collector to emitter diode forward current I

30 A

Collector to emitter diode forward peak current i

(peak)

Note1

120 A

Collector dissipation P

Note2

200 W

Junction to case thermal resistance (IGBT) θj-c

Note2

0.63 °C/ W

Junction to case thermal resistance (Diode) θj-cd

Note2

1.1 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

R07DS0794EJ0300

Rev.3.00

May 23, 2013

Summary of content (10 pages)

PAGE 1
Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0300 Rev.3.00 May 23, 2013 Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (25 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 50 ns typ.
PAGE 2
RJH60D5BDPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Collector to emitter breakdown voltage Item VBR(CES) Min 600 Typ — Max — Unit V Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 μA VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.0 — — — — — — — — — — — — — 1.6 2.
PAGE 3
RJH60D5BDPQ-E0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 100 Collector Current IC (A) Collector Dissipation Pc (W) 250 200 150 100 50 0 25 50 75 40 20 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 200 PW 100 10 0 μs = 10 Collector Current IC (A) 1000 Collector Current IC (A) 60 0 0 μs 10 1 0.
PAGE 4
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 25°C Pulse Test 4 IC = 37 A 75 A 3 2 1 4 8 16 12 20 Collector Current IC (A) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 150°C Pulse Test 4 IC = 37 A 75 A 3 2 1 4 12 20 16 Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) Collector to Emitter Saturation Voltage vs.
PAGE 5
RJH60D5BDPQ-E0 Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C tf td(off) 100 td(on) tr 10 100 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 1 Eoff Eon 0.1 0.
PAGE 6
RJH60D5BDPQ-E0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes Cres 10 0 50 100 150 200 250 300 800 IC = 37 A Tc = 25°C 600 VGE 8 4 200 VCE 0 0 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) VCC = 300 V IF = 30 A 200 150 Tc = 150°C 50 25°C 0 40 80 120 160 60 80 0 100 0.5 VCC = 300 V IF = 30 A 0.4 0.3 Tc = 150°C 0.2 0.
PAGE 7
Normalized Transient Thermal Impedance γs (t) RJH60D5BDPQ-E0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.63°C/W, Tc = 25°C 0.1 .05 0 0.1 PDM 0.02 0.01 1 shot pulse 0.01 100 μ 1m D= PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.
PAGE 8
RJH60D5BDPQ-E0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) tf td(on) tr Waveform Diode Reverse Recovery Time Test Circuit VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0794EJ0300 Rev.3.00 May 23, 2013 0.5 Irr 0.
PAGE 9
RJH60D5BDPQ-E0 Preliminary Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part No. RJH60D5BDPQ-E0#T2 R07DS0794EJ0300 Rev.3.
PAGE 10
Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2.