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R07DS0162EJ0400 Rev.4.00 Page 1 of 9

Apr 19, 2012

Preliminary Datasheet

RJH60D3DPP-M0

600V - 17A - IGBT

Application: Inverter

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

CE(sat)

= 1.6 V typ. (at I

= 17 A, V

= 15 V, Ta = 25°C)

 Built in fast recovery diode (100 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

= 70 ns typ. (at V

= 300 V, V

= 15 V, I

= 17 A, Rg = 5 , Ta = 25°C)

Outline

RENESAS Package code: PRSS0003AF-A

(Package name:

TO-220FL)

1. Gate

2. Collector

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

35 A Collector current

Tc = 100°C I

17 A

Collector peak current ic(peak)

Note1

70 A

Collector to emitter diode forward current i

17 A

Collector to emitter diode forward peak current i

(peak)

Note1

70 A

Collector dissipation P

Note2

40 W

Junction to case thermal resistance (IGBT) j-c

Note2

3.15 °C/ W

Junction to case thermal resistance (Diode) j-cd

Note2

4.9 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0162EJ0400

Rev.4.00

Apr 19, 2012

Summary of content (10 pages)

PAGE 1
Preliminary Datasheet RJH60D3DPP-M0 600V - 17A - IGBT Application: Inverter R07DS0162EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ.
PAGE 2
RJH60D3DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Collector to emitter breakdown voltage Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total swit
PAGE 3
RJH60D3DPP-M0 Preliminary Main Characteristics Power Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 40 Collector Current IC (A) Collector Dissipation Pc (W) 50 40 30 20 10 0 25 50 75 10 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 80 100 PW 10 0 μs = 10 Collector Current IC (A) 1000 Collector Current IC (A) 20 0 0 μs 10 1 0.
PAGE 4
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 25°C Pulse Test 4 IC = 17 A 35 A 3 2 1 4 8 16 12 20 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Tc = 150°C Pulse Test 5 IC = 17 A 4 35 A 3 2 1 4 12 20 16 Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) Collector to Emitter Saturation Voltage vs.
PAGE 5
RJH60D3DPP-M0 Preliminary Switching Characteristics (Typical) (1) 10 Swithing Energy Losses E (mJ) tf td(off) 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 0.1 Eoff Eon 0.01 1 100 10 1 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 1 1000 VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C tf 100 td(off) td(on) tr Eoff Eon 0.
PAGE 6
RJH60D3DPP-M0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes Cres 10 VGE = 0 V f = 1 MHz Tc = 25°C 1 0 50 100 150 200 250 800 VCC = 300 V IC = 17 A Tc = 25°C 600 8 200 4 VCE 0 300 0 Tc = 150°C 100 25°C 0 0 40 80 120 160 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 200 50 1.0 24 0 40 32 VCC = 300 V IF = 17 A 0.8 0.6 Tc = 150°C 0.4 0.
PAGE 7
Preliminary Normalized Transient Thermal Impedance γs (t) RJH60D3DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.1 θj – c(t) = γs (t) • θj – c θj – c = 3.15°C/W, Tc = 25°C 0.05 2 0.0 PDM 0.2 0.1 D= PW T 0.01 1 shot pulse 0.01 100 μ 1m PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.
PAGE 8
RJH60D3DPP-M0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0162EJ0400 Rev.4.00 Apr 19, 2012 0.5 Irr 0.
PAGE 9
RJH60D3DPP-M0 Preliminary Package Dimension Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part No. RJH60D3DPP-M0#T2 R07DS0162EJ0400 Rev.4.
PAGE 10
Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.