Datasheet

RJH60D2DPP-M0 Preliminary
R07DS0160EJ0400 Rev.4.00 Page 4 of 9
Apr 19, 2012
0
50
40
30
20
10
Gate to Emitter Voltage V
GE
(V)
Collector Current I
C
(A)
Gate to Emitter Voltage V
GE
(V)
Transfer Characteristics (Typical)
04812 2016
V
CE
= 10 V
Pulse Test
Tc = 25 ° C
150 ° C
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
5
4
3
2
1
5
4
3
2
1
4812 20
16
Tc = 150 ° C
Pulse Test
4 8 12 20
16
Tc = 25 ° C
Pulse Test
I
C
= 12 A
I
C
= 12 A
25 A
25 A
8
6
4
2
0
Frequency Characteristics (Typical)
Collector Current I
C(RSM)
(A)
Frequency f (kHz)
110010 1000
Tj = 150°C, Tc = 100°C
V
CE
= 300 V, V
GE
= 15 V
Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)
4.0
3.5
2.5
2.0
3.0
1.5
1.0
−25 0 25 75 12550 100
150
12 A
6 A
I
C
= 25 A
V
GE
= 15 V
Pulse Test
10
8
6
4
2
0
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Case Temparature Tc ( ° C)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25 0 25 75 12550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
I
C
= 10 mA