Datasheet

RJH60A83RDPP-M0 Preliminary
R07DS0808EJ0200 Rev.2.00 Page 6 of 8
Jul 12, 2012
8
4
20
16
12
Capacitance C (pF)
1
10
100
10000
1000
010050150 200 250
300
Cies
Coes
Cres
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
5 10 15 20
25
V
GE
= 0 V
f = 1 MHz
Ta = 25
° C
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0
0 40 80 200120
160
V
CC
= 300 V
I
F
= 10 A
Tc = 150 ° C
25 ° C
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
0
40
30
20
10
012 654
3
Tc = 25 ° C
150 ° C
V
GE
= 0 V
Pulse Test
0
0 40 80 200120
160
0.4
0.2
1.0
0.8
0.6
Tc = 150 ° C
25 ° C
V
CC
= 300 V
I
F
= 10 A
0 40 80 200120 160
0
Tc = 150 ° C
25 ° C
V
CC
= 300 V
I
F
= 10 A
V
CC
= 300 V
I
C
= 10 A
Tc = 25
° C
V
GE
V
CE
400
200
800
600