Datasheet

RJH60A83RDPP-M0 Preliminary
R07DS0808EJ0200 Rev.2.00 Page 2 of 8
Jul 12, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
V
(BR)CES
600 — — V I
C
=10 A, V
GE
= 0
Zero gate voltage collector current
/ diode reverse current
I
CES
/ I
R
— — 1 A V
CE
= 600 V, V
GE
= 0 V
Gate to emitter leak current I
GES
— — ±100 nA V
GE
= ±30 V, V
CE
= 0 V
Gate to emitter cutoff voltage V
GE(off)
4.5 — 7.5 V V
CE
= 10 V, I
C
= 1 mA
V
CE(sat)
— 2.1 2.6 V I
C
= 10 A, V
GE
= 15 V
Note3
Collector to emitter saturation voltage
V
CE(sat)
— 3.1 — V I
C
= 20 A, V
GE
= 15 V
Note3
Input capacitance Cies — 280 — pF
Output capacitance Coes — 19 — pF
Reveres transfer capacitance Cres — 11 — pF
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
Total gate charge Qg — 19.7 — nC
Gate to emitter charge Qge — 3.4 — nC
Gate to collector charge Qgc — 12.0 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 10 A
Turn-on delay time t
d(on)
— 31 — ns
Rise time t
r
— 14 — ns
Turn-off delay time t
d(off)
— 54 — ns
Fall time t
f
— 45 — ns
Turn-on energy E
on
— 0.23 — mJ
Turn-off energy E
off
— 0.16 — mJ
Total switching energy E
total
— 0.39 — mJ
V
CC
= 300V
V
GE
= 15 V
I
C
= 10 A,
Rg = 5 
Inductive load
Short circuit withstand time t
sc
3.0 5.0 — s
V
CE
 360 V, V
GE
= 15 V
Tj=100C
FRD Forward voltage V
F
— 2.3 — V I
F
= 10 A
Note3
FRD reverse recovery time t
rr
— 130 — ns
FRD reverse recovery charge Q
rr
— 0.28 — C
FRD peak reverse recovery current I
rr
— 5.9 — A
I
F
= 10 A
di
F
/dt = 100 A/s
Notes: 3. Pulse test.