Datasheet

IGBT Devices (1/2)
Part Number
V
CES
(V)
IGBT Diode Package
IC (A)
@ 100° C
VCEsat
(V) typ.
tf (ns)
typ.
tsc (µs)
typ.
Eoff (mJ)
typ.
Rthj-c
(° C/W)
FRD
Vf (V)
typ.
trr (ns)
typ.
Pc
(W)
Type
RJP6085DPN
600
40 2.65 40 – – 0.70 – – – 179 TO-220AB
RJP6085DPK 40 2.65 40 – – 0.70 – – – 179 TO-3P
RJH6085BDPK 40 2.65 40 – 0.75 0.70 Y 1.5 100 179 TO-3P
RJH6086BDPK 45 2.65 36 – 0.80 0.63 Y 1.4 100 198 TO-3P
RJH60F6DPQ-A0 45 1.35 74 – 0.93 0.42 Y 1.6 140 298 TO-247A
RJH60F7ADPK 50 1.35 90 – 0.90 0.38 Y 1.6 140 329 TO-3P
RJH60F7BDPQ-A0 50 1.35 90 – 0.90 0.38 Y 2.5 25 329 TO-247A
RJH60F7DPQ-A0 50 1.35 90 – 0.90 0.38 Y 1.2 90 329 TO-247A
RJH60D7ADPK 50 1.6 50 5 0.60 0.42 Y 1.4 100 300 TO-3P
RJH60D7DPM 50 1.6 50 5 0.60 2.27 Y 1.4 100 55 TO-3PFM
RJH60D7DPQ 50 1.6 50 5 0.60 0.42 Y 1.4 100 300 TO-247
RJH60D7BDPQ 50 1.6 50 5 0.60 0.42 Y 2.5 25 300 TO-247
RJH60M7DPQ 50 1.6 Tbd 8 0.60 0.42 Y 1.4 100 300 TO-247
RJH6087BDPK 50 2.65 55 – 1.05 0.56 Y 1.4 100 223 TO-3P
RJH6088BDPK 60 2.65 60 – 1.50 0.47 Y 1.4 100 269 TO-3P
RJH1BF6RDPQ-80
110 0
30 1.7 247 – – 0.55 Y 3 – 227 TO-247
RJH1BF7RDPQ-80 35 1.6 208 – – 0.50 Y 3 – 250 TO-247
RJH1CM5DPQ-A0
1200
15 2.1 100 10 0.90 0.48 Y 1.7 200 260 TO-247A
RJH1CF4RDPQ-80 20 2.0 300 – – 0.80 Y 4.2 – 156 TO-247
RJH1CD5DPQ-A0 20 2.0 100 5 0.90 0.48 Y 1.7 200 260 TO-247A
RJH1CM6DPQ-A0 20 2.1 100 10 1.20 0.42 Y 1.7 200 298 TO-247A
RJH1CF5RDPQ-80 25 1.95 272 – – 0.65 Y 4.2 – 192 TO-247
RJH1CV5DPQ-A0 25 1.8 200 5 1.50 0.48 Y 1.7 200 260 TO-247A
RJH1CD6DPQ-A0 25 2.0 100 5 1.20 0.42 Y 1.7 200 298 TO-247A
RJH1CM7DPQ-A0 25 2.1 100 10 1.80 0.38 Y 1.7 200 329 TO-247A
RJH1CF6R DPQ-80 30 1.8 275 – – 0.55 Y 3 – 227 TO-247
RJH1CV6DPQ-A0 30 1.8 200 5 1.70 0.42 Y 1.7 200 298 TO-247A
RJH1CD7DPQ-A0 30 2.0 100 5 1.80 0.38 Y 1.7 200 329 TO-247A
RJH1CF7RDPQ-80 35 1.85 250 – – 0.50 Y 3 – 250 TO-247
RJH1CV7DPQ-A0 35 1.8 200 5 2.50 0.38 Y 1.7 200 329 TO-247A
RJH1DF7RDPQ-80 1350 35 1.95 208 – – 0.50 Y 3.4 – 250 TO-247
IGBT Technology
Company D
Company C
Company B
Company A
Low conduction loss VCE(sat) (V)
(Inductive load, Tc = 125
0
C, Ic = 40 A, Vcc = 300 V, Vge = 15 V, RG = 5 Ω)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
200 400 600 800 1000 1200 1400 1600 1800
Low turn off loss
High
Effiency
Current generation
D-Series
CD-Series
CV-Series
A8-Series
M-Series
DF-Series
CF-Series 608-Series
High robustness
Short circuit time (typ) [µs]
Vce(sat) @ Ic= rating [A] typ.
10.0
5.0
0.0
1.25 1.5 1.75 2.0 2.25 2.5 2.75 3.0
Low conduction loss
BF-Series
F-Series
CM-Series
Tc = 25°C
Short circuit
condition
tsc vs. Vce(sat) for IGBT application optimized
characteristics