Datasheet

RJH1CV5DPK Preliminary
R07DS0746EJ0300 Rev.3.00 Page 6 of 9
Feb 14, 2013
10
5
30
25
20
15
0
1.0
0.5
3.0
2.5
2.0
1.5
0
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di
F
/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
0
80
60
40
20
0123
4
Tc = 25 ° C
150 ° C
V
CE
= 0 V
Pulse Test
Capacitance C (pF)
1
10
100
1000
10000
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20 40 60 80
100
V
GE
V
CE
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
I
C
= 25 A
V
CC
= 300 V
Tc = 25
° C
V
GE
= 0 V
f = 1 MHz
Tc = 25
° C
Cies
Coes
Cres
200
100
600
500
400
300
0
0 40 80200120 160
0 40 80200120 160
0 40 80200120
160
V
CC
= 400 V
I
F
= 25 A
V
CC
= 400 V
I
F
= 25 A
V
CC
= 400 V
I
F
= 25 A
Tc = 150 ° C
25 ° C
Tc = 150 ° C
25 ° C
0 40 80120160
200
Tc = 150 ° C
25 ° C