Datasheet

R01DS0064EJ0120 Rev.1.20 Page 74 of 109
Feb 6, 2013
R32C/117 Group 5. Electrical Characteristics
Notes:
1. Program/erase definition
This value represents the number of erasures per block.
When the number of program/erase cycles is n, each block can be erased n times.
For example, if a 4-word write is performed in 512 different addresses in the 4-Kbyte block A and
then the block is erased, this is counted as a single program/erase operation.
However, the same address cannot be written to more than once per erasure (overwrite disabled).
2. Data retention includes periods when no supply voltage is applied and no clock is provided.
3. Contact a Renesas Electronics sales office for data retention times other than the above condition.
Table 5.7 Electrical Characteristics of RAM
(V
CC
= 3.0 to 5.5 V, V
SS
=0V, and Ta=T
opr
, unless otherwise noted)
Symbol Characteristic
Measurement
Condition
Value
Unit
Min. Typ. Max.
V
RDR
RAM data retention voltage In stop mode
2.0 V
Table 5.8 Electrical Characteristics of Flash Memory
(V
CC
= 3.0 to 5.5 V, V
SS
=0V, and Ta=T
opr
, unless otherwise noted)
Symbol Characteristic
Value
Unit
Min. Typ. Max.
—
Program/erase cycles
(1)
Program area 1000 Cycles
Data area 10000 Cycles
— 4-word program time Program area 150 900 µs
Data area 300 1700 µs
— Lock bit program time Program area 70 500 µs
Data area 140 1000 µs
— Block erasure time 4-Kbyte block 0.12 3.0 s
32-Kbyte block 0.17 3.0 s
64-Kbyte block 0.20 3.0 s
—
Data retention
(2)
T
a
= 55°C
(3)
10 Years