Datasheet
R01DS0098EJ0180 Rev.1.80 Page 191 of 208
May 13, 2014
RX63N Group, RX631 Group 5. Electrical Characteristics
5.12 E
2
Flash Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. The result obtained from the reliability test.
Table 5.38 E2 Flash Characteristics (1)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6V, VREFH0 = 2.7V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0V
Temperature range for the programming/erasure operation: T
a
= T
opr
Item Symbol min typ max Unit Condition
Reprogram/erasure cycle*
1
N
DPEC
100000 — — Times
Data hold time t
DDRP
30*
2
— — Year Ta = +85°C
Table 5.39 E
2
Flash Characteristics (2)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= T
opr
Item Symbol
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
N
PEC
100 times
2 bytes t
DP2
— 0.7 6 — 0.25 2 ms
Programming time
N
PEC
> 100 times
2 bytes t
DP2
— 0.7 6 — 0.25 2 ms
Erasure time
N
PEC
100 times
32 bytes t
DE32
—440—220ms
Erasure time
N
PEC
> 100 times
32 bytes t
DE32
—740—420ms
Blank check time 2 bytes t
DBC2
— — 100 — — 30 μs
Suspend delay time during programming t
DSPD
— — 250 — — 120 μs
First suspend delay time during erasure
(in suspend priority mode)
t
DSESD1
— — 250 — — 120 μs
Second suspend delay time during erasure
(in suspend priority mode)
t
DSESD2
— — 500 — — 300 μs
Suspend delay time during erasure
(in erasure priority mode)
t
DSEED
— — 500 — — 300 μs