Datasheet
R01DS0060EJ0160 Rev.1.60 Page 142 of 154
May 19, 2014
RX630 Group 5. Electrical Characteristics
5.12 E
2
Flash Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This value is based on the result of the reliability test.
Table 5.32 E
2
Flash Characteristics (1)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= T
opr
Item Symbol Min. Typ. Max. Unit Test Conditions
Reprogram/erase cycle*
1
N
DPEC
100000 — — Times
Data hold time t
DDRP
30*
2
— — Year Ta = +85°C
Table 5.33 E
2
Flash Characteristics (2)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= T
opr
Item Symbol
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
N
DPEC
100 times
2 bytes t
DP2
— 0.7 6 — 0.25 2 ms
Programming time
N
DPEC
> 100 times
2 bytes t
DP2
— 0.7 6 — 0.25 2 ms
Erasure time
N
DPEC
100 times
32 bytes t
DE32
—440—220ms
Erasure time
N
DPEC
> 100 times
32 bytes t
DE32
—740—420ms
Blank check time 2 bytes t
DBC2
— — 100 — — 30 μs
Suspend delay time during programming t
DSPD
— — 250 — — 120 μs
First suspend delay time during erasure
(in suspend priority mode)
t
DSESD1
— — 250 — — 120 μs
Second suspend delay time during erasure
(in suspend priority mode)
t
DSESD2
— — 500 — — 300 μs
Suspend delay time during erasure
(in erasure priority mode)
t
DSEED
— — 500 — — 300 μs