Datasheet
R01DS0060EJ0160 Rev.1.60 Page 141 of 154
May 19, 2014
RX630 Group 5. Electrical Characteristics
5.11 ROM (Flash Memory for Code Storage) Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000),
erasing can be performed n times for each block. For instance, when 256-byte programming is performed 16 times for different
addresses in 4-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. The value is obtained from the reliability test.
Table 5.30 ROM (Flash Memory for Code Storage) Characteristics (1)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= T
opr
Item Symbol Min. Typ. Max. Unit Test Conditions
Reprogram/erase cycle*
1
N
PEC
1000 — — Times
Data hold time t
DRP
30*
2
— — Year Ta = +85°C
Table 5.31 ROM (Flash Memory for Code Storage) Characteristics (2)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= T
opr
Item Symbol
FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz
Unit
Min. Typ. Max. Min. Typ. Max.
Programming time
N
PEC
100 times
128 bytes t
P128
— 2.8 28 — 1 10 ms
4 Kbytes t
P4K
— 63 140 — 23 50 ms
16 Kbytes t
P16K
— 252 560 — 90 200 ms
Programming time
N
PEC
> 100 times
128 bytes t
P128
— 3.4 33.6 — 1.2 12 ms
4 Kbytes t
P4K
— 75.6 168 — 27.6 60 ms
16 Kbytes t
P16K
— 302.4 672 — 108 240 ms
Erasure time
N
PEC
100 times
4 Kbytes t
E4K
— 50 120 — 25 60 ms
16 Kbytes t
E16K
— 200 480 — 100 240 ms
Erasure time
N
PEC
> 100 times
4 Kbytes t
E4K
— 60 144 — 30 72 ms
16 Kbytes t
E16K
— 240 576 — 120 288 ms
Suspend delay time during programming t
SPD
— — 400 — — 120 μs
First suspend delay time during erasure
(in suspend priority mode)
t
SESD1
— — 300 — — 120 μs
Second suspend delay time during erasure
(in suspend priority mode)
t
SESD2
——1.7——1.7ms
Suspend delay time during erasure
(in erasure priority mode)
t
SEED
——1.7——1.7ms
FCU reset time t
FCUR
35 — — 35 — — μs