Datasheet

R01DS0052EJ0140 Rev.1.40 Page 141 of 150
2014.07.16
RX62N Group, RX621 Group 5. Electrical Characteristics
5.10 Data Flash (Flash Memory for Data Storage) Characteristics
Note 1. Definition of rewrite/erase cycle:
The rewrite/erase cycle is the number of erasing for each block. When the rewrite/erase cycle is n times (n = 30000), erasing can
be performed n times for each block. For instance, when 128-byte writing is performed 16 times for different addresses in 2-
Kbyte block and then the entire block is erased, the rewrite/erase cycle is counted as one. However, writing to the same address
for several times as one erasing is not enabled (over writing is prohibited).
Note 2. This indicates the minimum number that guarantees the characteristics after rewriting. (The guaranteed value is in the range
from one to the minimum number.)
Note 3. This indicates the characteristic when rewrite is performed within the specification range including the minimum number.
Table 5.27
Data Flash (Flash Memory for Data Storage) Characteristics
Conditions: VCC = PLLVCC = AVCC = VCC_USB = 2.7 to 3.6 V, VREFH = 2.7 V to AVCC
VSS = PLLVSS = AVSS = VREFL = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= -40 to +85C
Item Symbol Min. Typ. Max. Unit Test Conditions
Programming time 8 bytes t
DP8
— 0.4 2 ms PCLK = 50-MHz
operation
128 bytes t
DP128
—15ms
Erasure time 2 Kbytes t
DE2K
— 70 250 ms PCLK = 50-MHz
operation
Blank check time 8 bytes t
DBC8
— — 30 µs PCLK = 50-MHz
operation
2 Kbytes t
DBC2K
——0.7ms
Rewrite/erase cycle
*1
N
DPEC
30000
*2
——Times
Suspend delay time during writing t
DSPD
— — 120 µs Figure 5.67
PCLK = 50-MHz
operation
First suspend delay time during erasing (in
suspend priority mode)
t
DSESD1
——120µs
Second suspend delay time during erasing (in
suspend priority mode)
t
DSESD2
——1.7ms
Suspend delay time during erasing (in
erasure priority mode)
t
DSEED
——1.7ms
Data hold time
*3
t
DDRP
10 — — Year