Datasheet

R01DS0052EJ0140 Rev.1.40 Page 140 of 150
2014.07.16
RX62N Group, RX621 Group 5. Electrical Characteristics
5.9 ROM (Flash Memory for Code Storage) Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000),
erasing can be performed n times for each block. For instance, when 256-byte programming is performed 16 times for different
addresses in 4-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. The result obtained from the reliability test.
Table 5.25
ROM (Flash Memory for Code Storage) Characteristics (1)
Conditions: VCC = PLLVCC = AVCC = VCC_USB = 2.7 to 3.6 V, VREFH = 2.7 V to AVCC
VSS = PLLVSS = AVSS = VREFL = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= -40 to +85°C
Item Symbol Min. Typ. Max. Unit Test Conditions
Rewrite/erase cycle
*1
N
PEC
1000
——Times
Data hold time t
DRP
30*
2
— — Year T
a
= +85°C
Table 5.26
ROM (Flash Memory for Code Storage) Characteristics (2)
Conditions: VCC = PLLVCC = AVCC = VCC_USB = 2.7 to 3.6 V, VREFH = 2.7 V to AVCC
VSS = PLLVSS = AVSS = VREFL = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T
a
= -40 to +85C
Item Symbol Min. Typ. Max. Unit Test Conditions
Programming time 256 bytes t
P256
— 2 12 ms PCLK = 50 MHz
N
PEC
≤ 100
4 Kbytes t
P4K
—2350ms
16 Kbytes t
P16K
— 90 200 ms
256 byte t
P256
— 2.4 14.4 ms PCLK = 50 MHz
N
PEC
> 100
4 Kbytes t
P4K
— 27.6 60 ms
16 Kbytes t
P16K
— 108 240 ms
Erasure time 4 Kbytes t
E4K
— 25 60 ms PCLK = 50 MHz
N
PEC
≤ 100
16 Kbytes t
E16K
— 100 240 ms
4 Kbytes t
E4K
— 30 72 ms PCLK = 50 MHz
N
PEC
> 100
16 Kbytes t
E16K
— 120 288 ms
Suspend delay time during writing t
SPD
— — 120 µs Figure 5.67
PCLK = 50-MHz
operation
First suspend delay time during erasing
(in suspend priority mode)
t
SESD1
— — 120 µs
Second suspend delay time during erasing (in
suspend priority mode)
t
SESD2
——1.7ms
Suspend delay time during erasing
(in erasure priority mode)
t
SEED
——1.7ms