Datasheet

RX610 Group 5. Electrical Characteristics
R01DS0097EJ0120 Rev.1.20 Page 80 of 84
Feb 20, 2013
5.7 Data Flash (Flash Memory for Data Storage) Characteristics
Table 5.12 Data Flash (Flash Memory for Data Storage) Characteristics
Conditions: V
CC
= PLLV
CC
= AV
CC
= 3.0 to 3.6 V, V
REFH
= 3.0 V to AV
CC
, V
SS
= PLLV
SS
= V
REFL
= 0 V
Operating temperature range during programming/erasing:
T
a
= -20 to +85°C (regular specifications), T
a
= -40 to +85°C (wide-range specifications)
Item
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Programming time 8 bytes t
DP8
 0.4 2 ms
PCLK = 50-MHz
operation
128 bytes t
DP128
 1 5 ms
Erasure time 8 Kbytes t
DE8K
 300 900 ms
PCLK = 50-MHz
operation
Blank check time 8 bytes t
DBC8
  30 µs
PCLK = 50-MHz
operation
8 Kbytes t
DBC8K
  2.5 ms
Rewrite/erase cycle*
1
N
DPEC
30000*
2
  Times
Suspend delay time during writing t
DSPD
  120 µs
Figure 5.29
PCLK = 50-MHz
operation
First suspend delay time during erasing (in
suspend priority mode)
t
DSESD1
  120 µs
Second suspend delay time during erasing (in
suspend priority mode)
t
DSESD2
  1.7 ms
Suspend delay time during erasing (in erasure
priority mode)
t
DSEED
  1.7 ms
Data hold time*
3
T
DDRP
10   Year
Notes: 1. Definition of rewrite/erase cycle:
The rewrite/erase cycle is the number of erasing for each block. When the rewrite/erase cycle is n times (n = 30000), erasing
can be performed n times for each block. For instance, when 128-byte writing is performed 64 times for different addresses in
8-Kbyte block and then the entire block is erased, the rewrite/erase cycle is counted as one. However, writing to the same
address for several times as one erasing is not enabled (over writing is prohibited).
2. This indicates the minimum number that guarantees the characteristics after rewriting. (The guaranteed value is in the range
from one to the minimum number.)
3. This indicates the characteristic when rewrite is performed within the specification range including the minimum number.