Datasheet

R01DS0032EJ0200 Rev.2.00 Page 46 of 88
Feb 07, 2011
M16C/64A Group 5. Electrical Characteristics
Notes:
1. Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n = 10,000), each block can be erased n times.
For example, if a 4 KB block is erased after writing 2 word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
2. Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
5. Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.
6. The data hold time includes time that the power supply is off or the clock is not supplied.
Table 5.10 Flash Memory (Data Flash) Electrical Characteristics
V
CC1
= 2.7 to 5.5 V at T
opr
= -20 to 85°C/-40 to 85°C, unless otherwise specified.
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
-
Program and erase cycles
(1), (3), (4)
V
CC1
= 3.3 V, T
opr
= 25°C
10,000
(2)
times
- 2 word program time V
CC1
= 3.3 V, T
opr
= 25°C
300 4000
μs
- Lock bit program time V
CC1
= 3.3 V, T
opr
= 25°C
140 3000
μs
- Block erase time V
CC1
= 3.3 V, T
opr
= 25°C
0.2 3.0 s
- Program, erase voltage 2.7 5.5 V
- Read voltage 2.7 5.5 V
- Program, erase temperature
−20/−40
85 °C
t
PS
Flash memory circuit stabilization wait time 50 μs
-
Data hold time
(6)
Ambient temperature = 55 °C
20 year