Datasheet

R8C/M11A Group, R8C/M12A Group 4. Electrical Characteristics
R01DS0010EJ0200 Rev.2.00 Page 40 of 45
May 31, 2012
Notes:
1. 1.8 V
≤ Vcc < 2.7 V and Topr = -20 °C to 85 °C (N version)/-40 °C to 85 °C (D version), f(XIN) = 5 MHz, unless otherwise
specified.
2. High drive capacity can also be used while the peripheral output function is used.
Table 4.25 DC Characteristics (5) [1.8 V ≤ Vcc < 2.7 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output high voltage P1_2, P1_3, P1_4, P1_5,
P3_3, P3_4, P3_5, P3_7
(2)
When drive
capacity is high
IOH = -2 mA Vcc - 0.5 — Vcc V
When drive
capacity is low
I
OH = -1 mA Vcc - 0.5 — Vcc V
P1_0, P1_1, P1_6, P1_7,
P4_2, P4_5, P4_6, P4_7,
PA_0
I
OH = -1 mA Vcc - 0.5 — Vcc V
V
OL Output low voltage P1_2, P1_3, P1_4, P1_5,
P3_3, P3_4, P3_5, P3_7
(2)
When drive
capacity is high
IOL = 2 mA — — 0.5 V
When drive
capacity is low
I
OL = 1 mA — — 0.5 V
P1_0, P1_1, P1_6, P1_7,
P4_2, P4_5, P4_6, P4_7,
PA_0
I
OL = 1 mA — — 0.5 V
V
T+-VT-Hysteresis
INT0
, INT1, INT2, INT3,
KI0
, KI1, KI2, KI3,
TRJIO, TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
RXD0, CLK0
Vcc = 2.2 V 0.05 0.20 — V
RESET
Vcc = 2.2 V 0.05 0.20 — V
I
IH Input high current VI = 2.2 V, Vcc = 2.2 V — — 4.0 µA
I
IL Input low current VI = 0 V, Vcc = 2.2 V — — -4.0 µA
R
PULLUP Pull-up resistance VI = 0 V, Vcc = 2.2 V 70 140 300 kΩ
RfXIN Feedback resistance XIN — 2.2 — MΩ
VRAM RAM hold voltage In stop mode 1.8 — — V