Datasheet

R8C/M11A Group, R8C/M12A Group 4. Electrical Characteristics
R01DS0010EJ0200 Rev.2.00 Page 28 of 45
May 31, 2012
Notes:
1. Vcc = 2.7 V to 5.5 V and Topr = -20
°C to 85 °C (N version)/-40 °C to 85 °C (D version), unless otherwise specified.
2. Definition of program/erase endurance
The number of program/erase cycles is defined on a per-block basis.
If the number of cycles is 10,000, each block can be erased 10,000 times.
For example, if 1,024 cycles of 1-byte-write are performed to different addresses in 1 Kbyte of block A, and then the block is
erased, the number of cycles is counted as one. Note, however, that the same address must not be programmed more than
once before completion of an erase (overwriting prohibited).
3. This indicates the number of times up to which all electrical characteristics can be guaranteed after the last programming/
erase operation. Operation is guaranteed for any number of operations in the range of 1 to the specified minimum (Min).
4. In a system that executes multiple program operations, the actual erase count can be reduced by shifting the write addresses
in sequence and programming so that as much of the flash memory as possible is used before performing an erase operation.
For example, when programming in 16-byte units, the effective number of rewrites can be minimized by programming up to
128 units before erasing them all in one operation. It is also advisable to retain data on the number of erase operations for
each block and establish a limit for the number of erase operations performed.
5. If an error occurs during a block erase, execute a clear status register command and then a block erase command at least
three times until the erase error does not occur.
6. For information on the program/erase failure rate, contact a Renesas technical support representative.
7. The data hold time includes the time that the power supply is off and the time the clock is not supplied.
Figure 4.2 Transition Time until Suspend
Table 4.6 Flash Memory (Blocks A and B of Data Flash) Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
—
Program/erase endurance
(2)
10,000
(3)
——times
— Byte programming time — 150 —
µs
— Block erase time — 0.05 1 s
t
d(SR-SUS) Time delay from suspend request until
suspend
— — 0.25 + CPU clock
× 3 cycles
ms
— Time from suspend until erase restart — — 30 + CPU clock
× 1 cycle
µs
t
d(CMDRST-
READY)
Time from when command is forcibly
stopped until reading is enabled
— — 30 + CPU clock
× 1 cycle
µs
— Program/erase voltage 1.8 — 5.5 V
— Read voltage 1.8 — 5.5 V
— Program/erase temperature -20
(N version)
—85
°C
-40
(D version)
—85
°C
—
Data hold time
(7)
Ambient temperature = 85 °C 10 — — years
Suspend request
(FMR21)
FST6, FST7: Bits in FST register
FMR21: Bit in FMR2 register
Fixed time
FST6
Clock-dependent
time
td(SR-SUS)
Access restart
FST7