Datasheet

R8C/M11A Group, R8C/M12A Group 4. Electrical Characteristics
R01DS0010EJ0200 Rev.2.00 Page 27 of 45
May 31, 2012
Notes:
1. Vcc = 2.7 V to 5.5 V and Topr = 0
°C to 60 °C, unless otherwise specified.
2. Definition of program/erase endurance
The number of program/erase cycles is defined on a per-block basis.
If the number of cycles is 10,000, each block can be erased 10,000 times.
For example, if 1,024 cycles of 1-byte-write are performed to different addresses in 1 Kbyte of block A, and then the block is
erased, the number of cycles is counted as one. Note, however, that the same address must not be programmed more than
once before completion of an erase (overwriting prohibited).
3. This indicates the number of times up to which all electrical characteristics can be guaranteed after the last programming/
erase operation. Operation is guaranteed for any number of operations in the range of 1 to the specified minimum (Min).
4. In a system that executes multiple programming operations, the actual erase count can be reduced by shifting the write
addresses in sequence and programming so that as much of the flash memory as possible is used before performing an erase
operation. For example, when programming in 16-byte units, the effective number of rewrites can be minimized by
programming up to 128 units before erasing them all in one operation. It is also advisable to retain data on the number of
erase operations for each block and establish a limit for the number of erase operations performed.
5. If an error occurs during a block erase, execute a clear status register command and then a block erase command at least
three times until the erase error does not occur.
6. For information on the program/erase failure rate, contact a Renesas technical support representative.
7. The data hold time includes the time that the power supply is off and the time the clock is not supplied.
Table 4.5 Flash Memory (Program ROM) Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
—
Program/erase endurance
(2)
10,000
(3)
——times
— Byte programming time
(program/erase endurance
≤ 1,000
times)
—80 —
µs
— Byte programming time
(program/erase endurance
> 1,000
times)
— 160 —
µs
— Block erase time — 0.12 — s
t
d(SR-SUS) Transition time to suspend — — 0.25 + CPU clock
× 3 cycles
ms
— Time from suspend until erase restart — — 30 + CPU clock
× 1 cycle
µs
t
d(CMDRST
READY)
Time from when command is forcibly
terminated until reading is enabled
— — 30 + CPU clock
× 1 cycle
µs
— Program/erase voltage 1.8 — 5.5 V
— Read voltage 1.8 — 5.5 V
— Program/erase temperature 0 — 60
°C
—
Data hold time
(7)
Ambient temperature = 85 °C 10 — — years